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 PMEG4010EH_EJ_ET_4 ? NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 21 March 2007 4 of 11 NXP Semiconductors PMEG4010EH/EJ/ET 1 A very low VF MEGA Schottky barrier recti?ers 6. Thermal characteristics [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a signi?cant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Re?ow soldering is the only recommended soldering method. [5] Soldering point of cathode tab. 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] PMEG4010EH [2][4] - - 330 K/W [3][4] - - 150 K/W PMEG4010EJ [2][4] - - 350 K/W [3][4] - - 150 K/W PMEG4010ET [2] - - 440 K/W [3] - - 300 K/W Rth(j-sp) thermal resistance from junction to solder point [5] PMEG4010EH - - 60 K/W PMEG4010EJ - - 55 K/W PMEG4010ET - - 120 K/W Table 8. Characteristics Tamb =25°C unless otherwise speci?ed. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF= 0.1 mA - 95 130 mV IF= 1 mA - 155 210 mV IF= 10 mA - 220 270 mV IF= 100 mA - 295 350 mV IF= 500 mA - 420 470 mV IF= 1000 mA - 540 640 mV IR reverse current VR=10V - 7 20 μA VR= 40 V - 30 100μA Cd diode capacitance VR=1V; f=1MHz - 4350pF |